050-4908 rev c 7-2003 maximum ratings all ratings: t c = 25 c unless otherwise specified. static electrical characteristics symbol bv dss v ds (on) i dss i gss g fs v gs (th) characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250 m a) on state drain voltage 1 (i d (on) = 7.5a, v gs = 10v) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125 c) gate-source leakage current (v gs = 30v, v ds = 0v) forward transconductance (v ds = 25v, i d = 7.5a) gate threshold voltage (v ds = v gs , i d = 50ma) min typ max 450 3 25 250 100 5 8.5 25 unit volts m a na mhos volts symbol v dss v dgo i d v gs p d r q jc t j ,t stg t l parameterdrain-source voltage drain-gate voltage continuous drain current @ t c = 25 c gate-source voltagetotal power dissipation @ t c = 25 c junction to caseoperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. arf448a/448b (g) 450450 15 30 230 0.55 -55 to 150 300 unit volts amps volts watts c/w c rf power mosfets n- channel enhancement mode 150v 140w 65mhz the arf448a and arf448b comprise a symmetric pair of common source rf power transistors designed for push-pull scientific, commercial, medical and industrial rf power amplifier applications up to 65 mhz. specified 150 volt, 40.68 mhz characteristics: output power = 140 watts. gain = 15db (class c) efficiency = 75% low cost common source rf package.very high breakdown for improved ruggedness. low thermal resistance. nitride passivated die for improved reliability. to-247 arf448a (g) arf448b (g) g d s commonsource caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com *g denotes rohs compliant, pb free terminal finish. downloaded from: http:///
050-4908 rev b 10 20 30 40 50 60 65 30001000 500100 50 dynamic characteristics arf448a/448b (g) symbol c iss c oss c rss t d(on) t r t d(off) t f characteristicinput capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 150v f = 1 mhz v gs = 15v v dd = 0.5 v dss i d = i d[cont.] @ 25 c r g = 1.6 w min typ max 1400 1700 150 200 65 100 71 5 51 0 23 40 12 25 unit pf ns functional characteristics symbol g ps h y test conditions f = 40.68 mhz v gs = 0v v dd = 150v p out = 140w no degradation in output power characteristiccommon source amplifier power gain drain efficiency electrical ruggedness vswr 20:1 min typ max 13 15 70 75 unit db % 1 pulse test: pulse width < 380 m s, duty cycle < 2% apt reserves the right to change, without notice, the specifications and information contained herein. 1 5 10 50 100 500 gain (db) frequency (mhz) figure 1, typical gain vs frequency 3025 20 15 10 50 class c v dd = 150v p out = 250w 02 468 capacitance (pf) v ds , drain-to-source voltage (volts) figure 2, typical capacitance vs. drain-to-source voltage 1 5 10 50 150 i d , drain current (amperes) v ds , drain-to-source voltage (volts) figure 4, typical maximum safe operating area v gs , gate-to-source voltage (volts) figure 3, typical transfer characteristics i d , drain current (amperes) v ds > i d (on) x r ds (on)max. 250 m sec. pulse test @ <0.5 % duty cycle t j = -55 c t j = -55 c t j = +125 c t j = +25 c t c =+25 c t j =+150 c single pulse operation here limited by r ds (on) 10 m s 1ms10ms 100ms dc 100 m s 7010 51 .5.1 c iss c oss c rss 2520 15 10 50 downloaded from: http:///
050-4908 rev c 7-2003 4030 20 10 0 0 60 120 180 240 300 300240 180 120 60 0 freq. (mhz) z in - gate shunted by 25 w z ol - conjugate of optimum load impedance for 250w at 150v z in ( w )z ol ( w ) 2.0 13.527.0 40.0 65.0 56.00 - j 06.037.00 - j 26.0 18.00 - j 25.0 9.90 - j 19.24.35 - j 11.4 20.90 - j 9.2 2.40 - j 6.80.57 - j 2.6 0.31 - j 0.5 0.44 + j 1.9 g ps , common source amplifier gain (db) p out , power out (watts) figure 8, typical common source amplifier gain vs power out 1716 15 14 13 t c , case temperature ( c) figure 5, typical threshold voltage vs temperature 1.21.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 02 4 681 0 1 5 10 15 20 25 30 p in , power in (watts) figure 7, typical power out vs power in p out , power out (watts) v ds , drain-to-source voltage (volts) figure 6, typical output characteristics i d , drain current (amperes) v gs(th) , threshold voltage (normalized) arf448a/448b (g) 5.5v 4.5v 5v 6v v gs =8, 10 & 15v z q jc , thermal impedance ( c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 9, typical maximum effective transient thermal impedance, junction-to-case vs pulse duration class c v dd = 150v f = 40.68 mhz table 1 - typical class c large signal inpu t-o utput impedance class c v dd = 150v f = 40.68 mhz 6.5v 0.60.1 0.050.01 0.0050.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z q jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 downloaded from: http:///
050-4908 rev c 7-2003 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 3.55 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) source 2-plcs. top view arf448a device arf448b gate drain source source drain gate dimensions in millimeters and (inches)note: the arf446 and arf447 comprise a symmetric pair of rf power transistors and meet the same electrical specifications. the device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. l1 c2 t1 r1 dut l2 l3 c3 c4 c6 c7 c5 l4 150v + - rf output rf input c1 -- 1800pf 100v chipc2-c4 -- arco 463 mica trimmer c5-c7 -- 1nf 500v cog chip l1 -- 1" #16 awg into hairpin ~9.6nh l2 -- 6t #16 awg .25" id ~165nh l3 -- 10t #18 awg .25" id ~0.47 h l4 -- vk200-4b ferrite choke ~3 h r1 -- 25 ohm 1/2w carbont1 -- 9:1 broadband transformer 40.48 mhz test circuit c1 parts list to-247 package outline arf448a/448b (g) 40.68 mhz test circuit e3 100% sn plated downloaded from: http:///
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